Behaviors and physical degradation of HfSiON MOSFET linked to strained CESL performance booster

Author

Bae, Kidan ; Jin, Minjung ; Lim, Hajin ; Hwang, Lira ; Shin, Dongseok ; Park, Junekyun ; Heo, Jinchul ; Lee, Jongho ; Do, Jinho ; Bae, Ilchan ; Jeon, Chulhee ; Park, Jongwoo

Author_Institution

Technol. Reliability, Samsung Electron., Yongin, South Korea

fYear

2011

fDate

10-14 April 2011

Abstract

The propensity of HCI and BTI degradation of HfSiON MOSFET on strained SiN-CESL performance booster is meticulously investigated. It is found that HCI and BTI lifetime of HfO based n/p MOSFET devices depend on hydrogen, initial Dit and plasma charging inherently related to the stress type of CESL fabricated with PECVD. In case for tensile CESL, n/p MOSFET devices far exceed reliability targets for both HCI and BTI. While compressive CESL on n/p MOSFET drastically depresses HCI and BTI lifetime.

Keywords

MOSFET; hafnium compounds; plasma CVD; semiconductor device reliability; silicon compounds; stress effects; BTI degradation; HCI degradation; HfSiON; MOSFET behavior degradation; PECVD; hydrogen; initial Dit; n-MOSFET device; p MOSFET device; physical degradation; plasma charging; reliability target; strained SiN-CESL performance booster; tensile CESL; Human computer interaction; MOS devices; MOSFET circuits; Plasmas; Reliability; Silicon; Stress; BTI; CESL; CP; FTIR; HCI; Plasma; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784592

Filename

5784592