Title :
A high-performance bandgap reference with advanced curvature-compensation
Author :
Zhou, Zekun ; Xu, Xiangzhu ; Shi, Yue ; Ming, Xin ; Zhang, Bo
Author_Institution :
State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A high-performance bandgap reference (BGR) with segmented compensation is proposed in this paper. In order to realize high-order curvature compensation, a voltage proportional to Vbe/ß is used in lower temperature, and a voltage with more positive TC is added in higher temperature. The proposed BGR has been simulated with NEC 0.6μm BCD technology. The temperature coefficient (TC) is 5.4ppm/μC with the temperature ranged from -40°C to 80°C. There is only 0.1mV change in output voltage with supply voltage ranging from 2V to 5V. The power supply rejection ratio (PSRR) is 87dB at 3V supply voltage and room temperature without any filtering capacitor. The maximum power dissipation is only 0.04mW.
Keywords :
BIMOS integrated circuits; compensation; reference circuits; NEC BCD technology; advanced curvature-compensation; high-order curvature compensation; high-performance bandgap reference; power supply rejection ratio; segmented compensation; size 0.6 mum; temperature -40 degC to 80 degC; temperature 293 K to 298 K; temperature coefficient; voltage 2 V to 5 V;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157237
