An analytical model for SOI triple RESURF devices

Author

Huang, Haimeng ; Wang, Yongwei ; Chen, Xingbi

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2011

fDate

25-28 Oct. 2011

Firstpage

547

Lastpage

550

Abstract

An analytical model for the surface potential and electric field distributions of silicon-on-insulator (SOI) triple REduced SURface Field (RESURF) devices has been presented on the basis of the two-dimensional Poisson equation. Meanwhile, the lateral breakdown voltages for N⁺N and P⁺N junctions as well as the vertical breakdown voltage are derived. Further, the influence of P-buried layer concentration on the surface electric field and the breakdown voltage is investigated in detail. All analytical results are well verified by simulation results conducted by MEDICI, showing the validity of the presented model.

Keywords

Poisson equation; electric breakdown; electric fields; p-n junctions; semiconductor device models; silicon-on-insulator; surface potential; MEDICI; N+N junctions; P+N junctions; P-buried layer concentration; SOI triple RESURF device; electric field distributions; lateral breakdown voltages; reduced surface field device; silicon-on-insulator; surface potential; two-dimensional Poisson equation; vertical breakdown voltage; Analytical models;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2011 IEEE 9th International Conference on

Conference_Location

Xiamen

ISSN

2162-7541

Print_ISBN

978-1-61284-192-2

Electronic_ISBN

2162-7541

Type

conf

DOI

10.1109/ASICON.2011.6157263

Filename

6157263