Title :
An analytical model for SOI triple RESURF devices
Author :
Huang, Haimeng ; Wang, Yongwei ; Chen, Xingbi
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
An analytical model for the surface potential and electric field distributions of silicon-on-insulator (SOI) triple REduced SURface Field (RESURF) devices has been presented on the basis of the two-dimensional Poisson equation. Meanwhile, the lateral breakdown voltages for N+N and P+N junctions as well as the vertical breakdown voltage are derived. Further, the influence of P-buried layer concentration on the surface electric field and the breakdown voltage is investigated in detail. All analytical results are well verified by simulation results conducted by MEDICI, showing the validity of the presented model.
Keywords :
Poisson equation; electric breakdown; electric fields; p-n junctions; semiconductor device models; silicon-on-insulator; surface potential; MEDICI; N+N junctions; P+N junctions; P-buried layer concentration; SOI triple RESURF device; electric field distributions; lateral breakdown voltages; reduced surface field device; silicon-on-insulator; surface potential; two-dimensional Poisson equation; vertical breakdown voltage; Analytical models;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157263
