Title :
Mosfet´s hot carrier degradation characterization and modeling at a microscopic scale
Author :
Randriamihaja, Y. Mamy ; Zaka, A. ; Huard, V. ; Rafik, M. ; Rideau, D. ; Roy, D. ; Bravaix, A.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
Microscopic characterization of interface defects along the channel length is used to monitor the HC induced defect generation. The modeling of HC degradation is adapted to a microscopic scale and is found to be consistent with obtained lateral profiles.
Keywords :
MOSFET; hot carriers; interface phenomena; semiconductor device models; HC degradation modeling; HC induced defect generation; MOSFET; channel length; hot carrier degradation characterization; hot carrier degradation modeling; interface defect characterization; microscopic scale; Adaptation model; Degradation; Distribution functions; Logic gates; Microscopy; Monitoring; Stress; HCS; degradation modeling; interface defects;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784606
