DocumentCode :
3382390
Title :
Simultaneous extraction of threshold voltage and mobility degradation from on-the-fly NBTI measurements
Author :
Herfst, Rodolf W. ; Schmitz, Jurriaan ; Scholten, Andries J.
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
fYear :
2011
fDate :
10-14 April 2011
Abstract :
Conventional on-the-fly characterization of NBTI translates measured changes in drain current to a threshold voltage shift only. In this paper, we show how to extend this method to the simultaneous determination of threshold voltage and zero-field-mobility degradation by. This is achieved by using a Vector Network Analyzer for OTF characterization of gds and gm. For the technology under study, we have found that degradation in the zero-field mobility is responsible for at most 10% of the drain current change. Effective mobility, on the other hand, does change as a direct consequence of the threshold-voltage shift.
Keywords :
semiconductor device reliability; NBTI translates; negative bias temperature instability; on-the-fly NBTI measurement; on-the-fly characterization; threshold voltage shift; vector network analyzer; zero-field-mobility degradation; Current measurement; Degradation; Logic gates; Reliability; Stress; Threshold voltage; Voltage measurement; NBTI; On The Fly; RF; Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2011.5784607
Filename :
5784607
Link To Document :
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