MEMS-Based Probe Array for Wafer Level LSI Testing Transferred onto Low CTE LTCC Substrate by Au/Sn Eutectic Bonding

Author

Choe, S.-H. ; Tanaka, S. ; Esashi, M.

Author_Institution

Tohoku Univ., Sendai

fYear

2007

fDate

10-14 June 2007

Firstpage

2517

Lastpage

2520

Abstract

This paper describes the fabrication technology of a new MEMS-based probe card. The probe card is designed to satisfy requirements from advanced wafer-level, burn-in LSI tests. The problem of thermal expansion mismatch between the probe card and LSI wafers is solved by using a LTCC (low temperature cofired ceramics) substrate with a coefficient of thermal expansion of 3.4 ppm/degC. The probes are first formed on a silicon wafer, and then transferred to the LTCC substrate using Au/Sn solder bumps. The prototyped probe card was preliminarily evaluated in contact resistance. The measured contact resistance was 0.14 Omega during 2500 touchdowns.

Keywords

integrated circuit testing; large scale integration; micromechanical devices; test equipment; wafer level packaging; Au/Sn eutectic bonding; MEMS-based probe array; MEMS-based probe card; fabrication technology; low CTE LTCC substrate; low temperature cofired ceramics substrate; silicon wafer; thermal expansion; wafer level LSI testing; Contact resistance; Fabrication; Gold; Large scale integration; Probes; Temperature; Testing; Thermal expansion; Tin; Wafer bonding; Au/Sn Bonding; Burn-in Test; LTCC; Probe Card;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300683

Filename

4300683