Convective Gas Gyroscope Based on Thermo-Resistive Effect in Si P-N Junction

Author

Dau, Van Thanh ; Dao, Dzung Viet ; Shiozawa, Tatsuo ; Sugiyama, Susumu

Author_Institution

Ritsumeikan Univ., Shiga

fYear

2007

fDate

10-14 June 2007

Firstpage

2525

Lastpage

2528

Abstract

Convective gas gyroscope based on thermo-resistive effect in Si p-n junction was presented. The p-n junction thermistor, which has very high temperature sensitivity and accuracy, has been utilized as the sensing element. The fabricated p-n junction has the temperature coefficient of resistance (TCR) of 10 times larger and resistance of 20 times lower than those of the silicon thermistor. The lower resistance reduces the thermal noise while the higher value of TCR increases the sensitivity. The measured sensitivities for the X-axis and Y-axis were 28 mV/deg/sec and 27.72 mV/deg/sec, respectively. The cross sensitivity and angular error between flow axis and input axis is measured to be 1%FS and 1.5%FS, respectively. Non-linearity was measured to be smaller than 0.07%F.S.

Keywords

convection; elemental semiconductors; gyroscopes; micromechanical devices; p-n junctions; silicon; thermal noise; thermistors; thermoelectricity; Si; angular error; convective gas gyroscope; p-n junction thermistor; silicon p-n junction; temperature accuracy; temperature coefficient of resistance; temperature sensitivity; thermal noise reduction; thermo-resistive effect; Gyroscopes; P-n junctions; Gas gyroscope; dual axis; p-n junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300685

Filename

4300685