Title :
Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers
Author :
Weigl, B. ; Reiner, G. ; Grabherr, M. ; Ebeling, K.J.
Author_Institution :
Dept. of Optelectron., Ulm Univ., Germany
Abstract :
We have fabricated MBE grown, selectively oxidized multi-mode GaAs QW VCSELs with 730 /spl mu/A threshold, 8.5 mW output power and 40.3% conversion efficiency. Single-mode devices show 1.2 mW output power and better than 30 dB side mode suppression.
Keywords :
gallium arsenide; infrared sources; laser cavity resonators; laser modes; laser transitions; molecular beam epitaxial growth; oxidation; quantum well lasers; semiconductor growth; surface emitting lasers; 1.2 mW; 40.3 percent; 730 muA; 8.5 mW; 830 nm; GaAs; MBE grown; conversion efficiency; highly efficient selectively oxidized GaAs; mW output power; multi-mode GaAs QW VCSELs; side mode suppression; single-mode devices; vertical-cavity lasers; Electrons; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Oxidation; Power generation; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553757
