DocumentCode :
3382601
Title :
A thermal model for the top layer of 3D integrated circuits considering through silicon vias
Author :
Wang, Fengjuan ; Zhu, Zhangming ; Yang, Yintang ; Wang, Ning
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
618
Lastpage :
620
Abstract :
Based on the analytical thermal model for the top layer of three-dimensional integrated circuits (3D ICs) without through silicon vias (TSVs), the corresponding analytical thermal model taking TSVs into account is proposed. TSVs density ρ and effective thermal conductivity is introduced in this paper. The simulation results show that, the temperature increases sharply with the decrease of ρ for more layers and smaller ρ, and the best range of TSVs density ρ is 0.5% to 1% for an 8-layer 3D IC. These results can be effectively used as design guidelines in 3D IC thermal management studies.
Keywords :
thermal conductivity; thermal management (packaging); three-dimensional integrated circuits; 3D integrated circuits; analytical thermal model; thermal conductivity; thermal management; through silicon vias; Analytical models; Integrated circuit modeling; Three dimensional displays; Thermal Model; Three-Dimensional Integrated Circuits; Through Silicon Vias density;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157281
Filename :
6157281
Link To Document :
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