DocumentCode :
3382940
Title :
Origin of high on-state current for dopant-segregated schottky MOSFET
Author :
Tang, Yang ; Zhong, Liu-Lin ; Yu-Long Jiang
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
691
Lastpage :
693
Abstract :
The origin of the on-state current (Ion) difference between dopant-segregated Schottky (DSS) source/drain MOSFET and conventional MOSFET with 20nm channel length is investigated by device simulation. The simulation results coincide well with the published experimental result. It is revealed that the not-fully-depleted dopant-segregated layer leads to a severe DIBL effect which contributes to the Ion enhancement for DSS MOSFET.
Keywords :
MOSFET; Schottky barriers; semiconductor device models; semiconductor doping; device simulation; dopant-segregated Schottky MOSFET; ion enhancement; not-fully-depleted dopant-segregated layer; on-state current difference; size 20 nm; source/drain MOSFET; Decision support systems; Very large scale integration; DSS; MOSFET; On-State Current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157299
Filename :
6157299
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3382940
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