In situ thickness monitoring and adjusting during MBE growth for VCSEL

Author

Pan, Zhong ; Zhou, Zengqi ; Lin, Yaowang ; Niu, Zhichan ; Zhang, Yi ; Wu, Ronghan ; Wang, Wei

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

85

Lastpage

86

Abstract

We study the apparent substrate temperature oscillation during the whole growth of MBE-VCSEL. The accurate growth rate and mode wavelength are measured during the growth. The InGaAs-GaAs VCSEL with threshold current less than 200 /spl mu/A was achieved.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; molecular beam epitaxial growth; monitoring; quantum well lasers; semiconductor growth; substrates; surface emitting lasers; 200 muA; InGaAs-GaAs; InGaAs-GaAs VCSEL; MBE growth; MBE-VCSEL; VCSEL; accurate growth rate; apparent substrate temperature oscillation; in situ thickness monitoring; mode wavelength; threshold current; whole growth; Distributed Bragg reflectors; Gallium arsenide; Monitoring; Refractive index; Resonance; Substrates; Temperature; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553759

Filename

553759