Title :
In situ thickness monitoring and adjusting during MBE growth for VCSEL
Author :
Pan, Zhong ; Zhou, Zengqi ; Lin, Yaowang ; Niu, Zhichan ; Zhang, Yi ; Wu, Ronghan ; Wang, Wei
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
We study the apparent substrate temperature oscillation during the whole growth of MBE-VCSEL. The accurate growth rate and mode wavelength are measured during the growth. The InGaAs-GaAs VCSEL with threshold current less than 200 /spl mu/A was achieved.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; molecular beam epitaxial growth; monitoring; quantum well lasers; semiconductor growth; substrates; surface emitting lasers; 200 muA; InGaAs-GaAs; InGaAs-GaAs VCSEL; MBE growth; MBE-VCSEL; VCSEL; accurate growth rate; apparent substrate temperature oscillation; in situ thickness monitoring; mode wavelength; threshold current; whole growth; Distributed Bragg reflectors; Gallium arsenide; Monitoring; Refractive index; Resonance; Substrates; Temperature; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553759
