DocumentCode :
3383133
Title :
Strength of Si wafers with microcracks: A theoretical model
Author :
Rupnowski, Przemyslaw ; Sopori, Bhushan
Author_Institution :
National Renewable Energy Laboratory, Golden, CO 80401, USA
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
Wafer breakage is a major problem in the photovoltaic industry and becomes more serious as the industry attempts to use thinner wafers. It is well established that the poor strength of PV wafers is primarily due to the presence of residual microcracks, which are generated by cutting and wafering procedures and are not removed by subsequent etching of the wafers. This paper addresses fracture mechanics modeling of the strength of silicon PV wafers. We are showing that the surface damage, which includes the subsurface microcracks, determines the ultimate strength of the PV wafers. The modeling of PV wafers consists of Monte Carlo simulations and finiteelement analysis that is supported by the fracture energy theory for curved cracks. As an example, a virtual experiment on a statistical set of 100 wafers subjected to uniaxial tension is performed. The predicted strength distribution is shown to match well with the experimental results available in the literature.
Keywords :
Etching; Monte Carlo methods; Photovoltaic systems; Production; Semiconductor device modeling; Silicon; Solar power generation; Stress; Surface cracks; Weibull distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922796
Filename :
4922796
Link To Document :
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