Novel concepts for high voltage junction termination techniques using very deep trenches

Numerous techniques have been used to improve the voltage handling capability of high voltage power devices with the aim to obtain the breakdown of a plane junction. In this work, we present a new high voltage junction termination technique using very deep trenches available from microsystems technologies. This new concept names Trench Termination Technique: T³ increase the device breakdown voltage to almost the ideal value of the plane case and, in the same time, consume a much lower Silicon space than the previous proposed solutions as an example. Two different architectures for 6 kV devices are described, but these techniques are easily scalable to any voltage range (in the field of high voltage devices)