Multiple-wavelength MBE-regrown vertical-cavity laser arrays integrated with refractive microlenses for optical interconnections

Author

Strzelecka, E.M. ; Wipiejewski, T. ; Ko, J. ; Thibeault, B.J. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

87

Lastpage

88

Abstract

An array of 7 multiple-wavelength MBE-regrown InGaAs QW VCSELs with 15 nm span and 30 /spl mu/m pitch is monolithically integrated with a refractive GaAs microlens on the back surface. The lens collimates individual beams to a divergence half angle <1.5/spl deg/ and separates them by /spl sim/5.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser accessories; laser beams; laser cavity resonators; lenses; molecular beam epitaxial growth; optical collimators; quantum well lasers; semiconductor growth; surface emitting lasers; 15 nm; 30 mum; InGaAs; InGaAs QW VCSELs; back surface; divergence half angle; lens collimates; monolithically integrated; multiple-wavelength MBE-regrown VCSELs; multiple-wavelength MBE-regrown vertical-cavity laser arrays; optical interconnections; refractive GaAs microlens; refractive microlenses; Collimators; Gallium arsenide; Indium gallium arsenide; Laser beams; Lenses; Microoptics; Molecular beam epitaxial growth; Optical arrays; Optical refraction; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553760

Filename

553760