Title :
Design considerations for an ultra-low voltage amplifier with high EMI immunity
Author_Institution :
Dept. of Electron., Univ. of Brescia, Brescia
fDate :
Aug. 31 2008-Sept. 3 2008
Abstract :
In this paper a class AB CMOS operational amplifier is devised. It is based on a two stages strongly symmetrical topology, very attractive in order to minimize the effects of disturbances arising from a wide class of sources. The amplifier can be fabricated in standard CMOS technology and is suitable for the low voltage supply of current integrated circuits. Simulation results, in terms of EMI immunity, are presented and compared with classical architectures.
Keywords :
CMOS integrated circuits; amplifiers; low-power electronics; class AB CMOS operational amplifier; current integrated circuits; high EMI immunity; low voltage supply; strongly symmetrical topology; ultralow voltage amplifier; CMOS technology; Circuit topology; Current supplies; Electromagnetic interference; Filters; Frequency; Low voltage; Operational amplifiers; Pins; Wires;
Conference_Titel :
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location :
St. Julien´s
Print_ISBN :
978-1-4244-2181-7
Electronic_ISBN :
978-1-4244-2182-4
DOI :
10.1109/ICECS.2008.4674914
