DocumentCode
3383319
Title
Design considerations for an ultra-low voltage amplifier with high EMI immunity
Author
Richelli, Anna
Author_Institution
Dept. of Electron., Univ. of Brescia, Brescia
fYear
2008
fDate
Aug. 31 2008-Sept. 3 2008
Firstpage
558
Lastpage
561
Abstract
In this paper a class AB CMOS operational amplifier is devised. It is based on a two stages strongly symmetrical topology, very attractive in order to minimize the effects of disturbances arising from a wide class of sources. The amplifier can be fabricated in standard CMOS technology and is suitable for the low voltage supply of current integrated circuits. Simulation results, in terms of EMI immunity, are presented and compared with classical architectures.
Keywords
CMOS integrated circuits; amplifiers; low-power electronics; class AB CMOS operational amplifier; current integrated circuits; high EMI immunity; low voltage supply; strongly symmetrical topology; ultralow voltage amplifier; CMOS technology; Circuit topology; Current supplies; Electromagnetic interference; Filters; Frequency; Low voltage; Operational amplifiers; Pins; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location
St. Julien´s
Print_ISBN
978-1-4244-2181-7
Electronic_ISBN
978-1-4244-2182-4
Type
conf
DOI
10.1109/ICECS.2008.4674914
Filename
4674914
Link To Document