DocumentCode :
3383425
Title :
A new approach for the fabrication of gain-coupled DFB laser diodes using focused ion beams
Author :
Höfling, E. ; Orth, A. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
fYear :
1996
fDate :
13-18 Oct. 1996
Firstpage :
89
Lastpage :
90
Abstract :
Gain-coupled distributed feedback (DFB) quantum well laser diodes have been made by focused ion beam implantation and subsequent thermal annealing. The uncoated laser devices show single longitudinal mode emission with very high yield.
Keywords :
distributed feedback lasers; focused ion beam technology; laser modes; optical couplers; optical fabrication; quantum well lasers; semiconductor technology; waveguide lasers; focused ion beam implantation; focused ion beams; gain-coupled DFB laser diode fabrication; gain-coupled distributed feedback quantum well laser diodes; single longitudinal mode emission; subsequent thermal annealing; uncoated laser devices; very high yield; Annealing; Diode lasers; Distributed feedback devices; Fiber lasers; Gratings; Ion beams; Laser feedback; Laser modes; Optical device fabrication; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
Type :
conf
DOI :
10.1109/ISLC.1996.553761
Filename :
553761
Link To Document :
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