Title :
Analyses of a COOL-MOSFET
Author :
Spuiber, O. ; De Souza, M.M. ; Narayanan, E.M.S. ; Krishnan, S.
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Abstract :
The recent introduction of the COOLMOS device has demonstrated the possibility of a new realm of vertical power devices with significantly reduced on-resistance. In this paper, a detailed analysis of the on-state performance and breakdown voltage of the COOLMOS is presented
Keywords :
power MOSFET; semiconductor device breakdown; COOL-MOSFET; breakdown voltage; on-resistance; vertical power device; Avalanche breakdown; Breakdown voltage; Doping; Electric breakdown; Immune system; MOSFETs; P-n junctions; Power electronics; Switching circuits; Voltage control;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810446
