Title :
A novel linear power amplifier for 2.6GHz LTE applications
Author :
Deng, Jianbao ; Zhang, Shilin ; Mao, Luhong ; Xie, Sheng ; Li, Huichao
Author_Institution :
Sch. of Electron. & Inf. Eng., Tianjin Univ., Tianjin, China
Abstract :
The design of RF power amplifier (PA) is a challenging task in deep submicron CMOS process. This paper presents a novel power amplifier (PA) for long term evolution (LTE) wireless communication system applications. Associated with antenna design, dipole antenna is used as resonance inductance of the differential PA. The total chip area is reduced greatly to 550μm×450μm in a 0.18μm CMOS process due to saving two on-chip inductors. Operating in Class-AB with a supply voltage of 3.3V, the linear PA can provide a total linear output power of 21dBm with a power gain of 18dB and maximum power added efficiency (PAE) of 23% at 2.6GHz.
Keywords :
CMOS integrated circuits; Long Term Evolution; dipole antennas; power amplifiers; LTE application; LTE wireless communication system; RF power amplifier; antenna design; deep submicron CMOS process; differential PA; dipole antenna; frequency 2.6 GHz; linear power amplifier; long term evolution; on-chip inductors; resonance inductance; size 0.18 mum; voltage 3.3 V; CMOS integrated circuits; CMOS technology; Radio frequency; Resistors; WiMAX;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157328
