On the advantages of InAlAs/InGaAs/InP dual-gate-HFETs in comparison to conventional single-gate-HFETs

Author

Daumann, W. ; Brockerhoff, W. ; Bertenburg, R. ; Reuter, R. ; Auer, U. ; Molls, W. ; Tegude, F.J.

Author_Institution

Dept. of Solid-State Electron., Gerhard-Mercator Univ., Duisburg, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

462

Lastpage

465

Abstract

Demonstrates that using a Dual-Gate-HFET (DGHFET) as a cascode instead of a conventional InAlAs/lnGaAs Single-Gate HFET (SGHFET) impact ionization itself can be prevented without degradation of the DC- and RF-performance of the device, and consequently, the gate leakage current can be significantly reduced. A direct comparison between both, the DGHFET and the SGHFET, will precisely point out the advantages of a DGHFET compared to a SGHFET in the InAlAs/InGaAs system

Keywords

III-V semiconductors; aluminium compounds; characteristics measurement; gallium arsenide; impact ionisation; indium compounds; leakage currents; millimetre wave field effect transistors; DGHFET; III-V semiconductors; InAlAs-InGaAs-InP; cascode; dual-gate-HFET; gate leakage current; gate recess; impact ionization; millimetre-wave devices; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Leakage current; MODFETs; Solid state circuits; Transconductance; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492282

Filename

492282