Title :
A novel CMOS Bandgap reference circuit with improved high-order temperature compensation
Author :
Koudounas, Savvas ; Andreou, Charalambos M. ; Georgiou, Julius
Author_Institution :
ECE Dept., Univ. of Cyprus, Nicosia, Cyprus
fDate :
May 30 2010-June 2 2010
Abstract :
This paper proposes a new CMOS bandgap reference generator topology that allows a straightforward implementation of an exact curvature compensation method by using only poly-silicon resistors. This is achieved by using a second Opamp that generates a CTAT current, which is subsequently used to enhance the curvature compensation method. A superior theoretical performance than previously proposed architectures is achieved with respect to temperature sensitivity of the reference voltage. In nominal simulations, that was less than 0.lppm over a temperature range of -40 to 125 for a CMOS 0.35 μm technology. In practice, the proposed BGR is sensitive to device mismatch and thus resistor trimming is necessary if high performance is required.
Keywords :
CMOS integrated circuits; compensation; reference circuits; resistors; CMOS bandgap reference circuit; CMOS bandgap reference generator topology; CTAT current; curvature compensation method; high-order temperature compensation; polysilicon resistors; reference voltage; resistor trimming; size 0.35 mum; temperature sensitivity; CMOS technology; Circuit topology; Niobium; Photonic band gap; Resistors; Signal design; Temperature dependence; Temperature distribution; Temperature sensors; Voltage; Bandgap Voltage Reference; Curvature Compensation; High order non-linearity;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537621