Title :
A nearly ideal SiC Schottky barrier device edge termination
Author :
Brezeanu, G. ; Badila, M. ; Millan, J. ; Godignon, Ph. ; Locatelli, Marie Laure ; Chante, J.P. ; Lebedev, A. ; Dilimot, G. ; Enache, I. ; Bica, G. ; Banu, V.
Author_Institution :
Univ. Politehnica Bucharest, Romania
Abstract :
A simple edge termination based on oxide ramp profile around the Schottky contact is used on a Ni Schottky rectifier fabricated on a 2.7×1016 n-type 6H-SiC epilayer. Three anneals of the Schottky contacts were studied experimentally. The diodes annealed at 900°C showed excellent reverse characteristics with a nearly ideal breakdown at about 800 V. Forward characteristics followed thermionic emission theory with ideality factor nearly one
Keywords :
Schottky barriers; Schottky diodes; annealing; high-temperature electronics; nickel; power semiconductor diodes; semiconductor device breakdown; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 800 V; 900 C; Ni Schottky rectifier; Schottky contact annealing; SiC-Ni; edge termination; forward characteristics; high voltage high temperature operation; ideality factor; n-type 6H-SiC epilayer; nearly ideal SiC Schottky barrier device edge termination; nearly ideal breakdown; oxide ramp profile; reverse characteristics; thermionic emission theory; Annealing; Breakdown voltage; Electric breakdown; Gallium arsenide; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor materials; Silicon carbide; Temperature;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810458
