DocumentCode
3383669
Title
Characterization and Performance Analysis of LPCVD Germanium-on-Silicon C-Band Photodiodes
Author
Orcutt, J.S. ; Olubuyide, O.O. ; DiLello, N. ; Hoyt, J.L. ; Ram, R.J.
Author_Institution
Massachusetts Inst. of Technol., Cambridge
fYear
2007
fDate
19-22 Aug. 2007
Firstpage
92
Lastpage
94
Abstract
Spatially-resolved photoresponse and bias-dependent modulation measurements of large area vertically-illuminated germanium photodiodes are presented. These measurements are compared with finite-element device simulations to theorize possible sources of performance limitations revealed by different measurement conditions.
Keywords
Ge-Si alloys; photodiodes; semiconductor materials; Ge-Si; LPCVD germanium-on-silicon C-band photodiodes; finite-element device simulations; spatial characterization; Buffer layers; Current measurement; Frequency response; Geometry; Germanium; Passivation; Performance analysis; Performance evaluation; Photodetectors; Photodiodes; germanium photodiodes; photodiode characterization; spatial characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics in Switching, 2007
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-1121-1
Electronic_ISBN
1-4244-1122-X
Type
conf
DOI
10.1109/PS.2007.4300752
Filename
4300752
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