Title :
Characterization and Performance Analysis of LPCVD Germanium-on-Silicon C-Band Photodiodes
Author :
Orcutt, J.S. ; Olubuyide, O.O. ; DiLello, N. ; Hoyt, J.L. ; Ram, R.J.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge
Abstract :
Spatially-resolved photoresponse and bias-dependent modulation measurements of large area vertically-illuminated germanium photodiodes are presented. These measurements are compared with finite-element device simulations to theorize possible sources of performance limitations revealed by different measurement conditions.
Keywords :
Ge-Si alloys; photodiodes; semiconductor materials; Ge-Si; LPCVD germanium-on-silicon C-band photodiodes; finite-element device simulations; spatial characterization; Buffer layers; Current measurement; Frequency response; Geometry; Germanium; Passivation; Performance analysis; Performance evaluation; Photodetectors; Photodiodes; germanium photodiodes; photodiode characterization; spatial characterization;
Conference_Titel :
Photonics in Switching, 2007
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-1121-1
Electronic_ISBN :
1-4244-1122-X
DOI :
10.1109/PS.2007.4300752
