• DocumentCode
    3383696
  • Title

    A study of contamination levels measurement techniques, testing methods, and switching results for silicon compounds on silver arcing contacts

  • Author

    Witter, G.J. ; Leiper, R.A.

  • Author_Institution
    Chugai USA Inc., Waukegan, IL, USA
  • fYear
    1992
  • fDate
    18-21 Oct. 1992
  • Firstpage
    173
  • Lastpage
    180
  • Abstract
    Silicon compounds, both inorganic and organic, are detrimental contaminants for arcing electrical contacts. The authors review past work and introduce new data correlating contamination levels with switching performance. Methods for measuring silicon contamination on the contact surface by use of an energy dispersive X-ray analyzer (EDXA) are described. The difference in mechanisms with both mineral and silicone types of contamination is explained. Silicone contamination build up is controlled by migration rate and breakdown of silicones in the arc. Mineral (grit) contamination reacts immediately with the arc and affects early switching life of contacts.<>
  • Keywords
    X-ray chemical analysis; circuit-breaking arcs; electrical contacts; electron device testing; silver; surface structure; switching; Ag contact; EDXA; Si compounds; SiC; arcing electrical contacts; contact surface; contamination levels measurement techniques; energy dispersive X-ray analyzer; grit contamination; migration rate; mineral contamination; silicone breakdown; silicone contamination; switching life; switching performance; testing methods; Contacts; Dispersion; Electric breakdown; Energy measurement; Level measurement; Minerals; Pollution measurement; Silicon compounds; Surface contamination; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Contacts, 1992., Proceedings of the Thirty-Eighth IEEE Holm Conference on
  • Conference_Location
    Philadelphia, PA, USA
  • Print_ISBN
    0-7803-0576-0
  • Type

    conf

  • DOI
    10.1109/HOLM.1992.246918
  • Filename
    246918