DocumentCode
3383696
Title
A study of contamination levels measurement techniques, testing methods, and switching results for silicon compounds on silver arcing contacts
Author
Witter, G.J. ; Leiper, R.A.
Author_Institution
Chugai USA Inc., Waukegan, IL, USA
fYear
1992
fDate
18-21 Oct. 1992
Firstpage
173
Lastpage
180
Abstract
Silicon compounds, both inorganic and organic, are detrimental contaminants for arcing electrical contacts. The authors review past work and introduce new data correlating contamination levels with switching performance. Methods for measuring silicon contamination on the contact surface by use of an energy dispersive X-ray analyzer (EDXA) are described. The difference in mechanisms with both mineral and silicone types of contamination is explained. Silicone contamination build up is controlled by migration rate and breakdown of silicones in the arc. Mineral (grit) contamination reacts immediately with the arc and affects early switching life of contacts.<>
Keywords
X-ray chemical analysis; circuit-breaking arcs; electrical contacts; electron device testing; silver; surface structure; switching; Ag contact; EDXA; Si compounds; SiC; arcing electrical contacts; contact surface; contamination levels measurement techniques; energy dispersive X-ray analyzer; grit contamination; migration rate; mineral contamination; silicone breakdown; silicone contamination; switching life; switching performance; testing methods; Contacts; Dispersion; Electric breakdown; Energy measurement; Level measurement; Minerals; Pollution measurement; Silicon compounds; Surface contamination; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Contacts, 1992., Proceedings of the Thirty-Eighth IEEE Holm Conference on
Conference_Location
Philadelphia, PA, USA
Print_ISBN
0-7803-0576-0
Type
conf
DOI
10.1109/HOLM.1992.246918
Filename
246918
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