• DocumentCode
    3383830
  • Title

    A subthreshold MOSFET bandgap reference with ultra-low power supply voltage

  • Author

    Li, Yilei ; Wang, Yu ; Yan, Na ; Tan, Xi ; Min, Hao

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    862
  • Lastpage
    865
  • Abstract
    A novel bandgap reference (BGR) with ultra low supply voltage is presented. The proposed bandgap reference uses subthreshold MOSFETs to provide temperature compensation. Analysis and comparison between proposed bandgap and conventional current-mode bandgap are made, and it is shown that when working with low supply voltage, the proposed bandgap is less sensitive to mismatch and power supply noise. The bandgap reference is implemented in SMIC 0.13μm RF technology, and simulation results show that it can provide the output voltage of 429 mV with a supply voltage as low as 0.6 V.
  • Keywords
    MOSFET; energy gap; low-power electronics; SMIC RF technology; current-mode bandgap; size 0.13 mum; subthreshold MOSFET bandgap reference; temperature compensation; ultra-low power supply voltage; voltage 0.6 V; voltage 429 mV; CMOS integrated circuits; CMOS technology; Logic gates; Photonic band gap; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2011 IEEE 9th International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-61284-192-2
  • Electronic_ISBN
    2162-7541
  • Type

    conf

  • DOI
    10.1109/ASICON.2011.6157341
  • Filename
    6157341