DocumentCode
3383830
Title
A subthreshold MOSFET bandgap reference with ultra-low power supply voltage
Author
Li, Yilei ; Wang, Yu ; Yan, Na ; Tan, Xi ; Min, Hao
Author_Institution
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
862
Lastpage
865
Abstract
A novel bandgap reference (BGR) with ultra low supply voltage is presented. The proposed bandgap reference uses subthreshold MOSFETs to provide temperature compensation. Analysis and comparison between proposed bandgap and conventional current-mode bandgap are made, and it is shown that when working with low supply voltage, the proposed bandgap is less sensitive to mismatch and power supply noise. The bandgap reference is implemented in SMIC 0.13μm RF technology, and simulation results show that it can provide the output voltage of 429 mV with a supply voltage as low as 0.6 V.
Keywords
MOSFET; energy gap; low-power electronics; SMIC RF technology; current-mode bandgap; size 0.13 mum; subthreshold MOSFET bandgap reference; temperature compensation; ultra-low power supply voltage; voltage 0.6 V; voltage 429 mV; CMOS integrated circuits; CMOS technology; Logic gates; Photonic band gap; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location
Xiamen
ISSN
2162-7541
Print_ISBN
978-1-61284-192-2
Electronic_ISBN
2162-7541
Type
conf
DOI
10.1109/ASICON.2011.6157341
Filename
6157341
Link To Document