DocumentCode :
3383909
Title :
Light-Induced Degradation in Multicrystalline Silicon Solar Cells Made of Metallurgical Grade Silicon
Author :
Ren, Xianpei ; Chen, Chao ; Cheng, Haoran ; He, Falin
Author_Institution :
Sch. of Energy Res., Xiamen Univ., Xiamen, China
fYear :
2012
fDate :
27-29 March 2012
Firstpage :
1
Lastpage :
4
Abstract :
This study focuses on the evolution under illumination of the efficiency of multicrystalline silicon solar cells made of metallurgical grade silicon. First, we calculated the activation energy of BOi2 defect generation and annihilation from efficiency measurements and compared with previous values deterimined by Minority carrier lifetime and open-circuit voltage measurements, the results are much consistent. Then we shown via external quantum efficiency measurements that this material is sensitive to light-induced degradation effects due to the formation of BOi2 defects and the dissociation of iron-boron pairs, and the former is the major fator. Finally, we discussed how to reduce the light-induced degradation.
Keywords :
carrier lifetime; elemental semiconductors; minority carriers; silicon; solar cells; Si; activation energy; annihilation; defect generation; efficiency measurements; external quantum efficiency measurement; iron-boron pair dissociation; light-induced degradation effect; metallurgical grade silicon; minority carrier lifetime; multicrystalline silicon solar cells; open-circuit voltage measurement; Degradation; Energy measurement; Lighting; Photovoltaic cells; Pollution measurement; Silicon; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power and Energy Engineering Conference (APPEEC), 2012 Asia-Pacific
Conference_Location :
Shanghai
ISSN :
2157-4839
Print_ISBN :
978-1-4577-0545-8
Type :
conf
DOI :
10.1109/APPEEC.2012.6306911
Filename :
6306911
Link To Document :
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