DocumentCode :
3384169
Title :
Excellent power-generating properties by using the HIT structure
Author :
Ide, Daisuke ; Taguchi, Mikio ; Yoshimine, Yukihiro ; Baba, Toshiaki ; Kinoshita, Toshihiro ; Kanno, Hiroshi ; Sakata, Hitoshi ; Maruyama, Eiji ; Tanaka, Makoto
Author_Institution :
Advanced Energy Research Center, SANYO Electric Co., Ltd., Japan
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
5
Abstract :
We are developing HIT solar cells with high conversion efficiency, which was achieved the world´s highest conversion efficiency of 22.3% in a practical size solar cell in July 2007. We have four main approaches to reducing power-generating cost: improve the conversion efficiency, apply the HIT structure to a thin wafer, improve the temperature coefficient, and apply HIT solar cells to a bifacial solar module. Using these approaches, we have achieved the remarkably high conversion efficiency of 21.4% due to a high Voc of 0.739 V with an 85-μm cell, which was measured at SANYO. A thinner Si wafer brings not only high Voc but also generating more output power at high temperature for a better temperature coefficient. We have confirmed that the HIT structure is suitable for use in thinner wafers, allowing us to reduce power-generating cost.
Keywords :
Amorphous silicon; Commercialization; Costs; Electrodes; Heterojunctions; Photovoltaic cells; Power generation; Production; Solar power generation; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922849
Filename :
4922849
Link To Document :
بازگشت