Title :
Highly strained Ga/sub x/In/sub 1-x/P-(Al/sub y/Ga/sub 1-y/)/sub 0.51/In/sub 0.49/P quantum well lasers
Author :
Mogensen, P.C. ; Smowton, P.M. ; Blood, P.
Author_Institution :
Dept. of Phys. & Astron., Wales Univ., Cardiff, UK
Abstract :
For increasing compressive strain (1%-1.7%), the 290 K threshold current increases by a factor 3.3. We experimentally show this arises from an increased waveguide loss (10 cm/sup -1/-46 cm/sup -1/) because the well is no longer elastically strained.
Keywords :
III-V semiconductors; aluminium compounds; compressive strength; gallium compounds; indium compounds; optical losses; quantum well lasers; waveguide lasers; 290 K; Ga/sub x/In/sub 1-x/P-(Al/sub y/Ga/sub 1-y/)/sub 0.51/In/sub 0.49/P quantum well lasers; GaInP-AlGaInP; compressive strain; elastically strained; highly strained; increased waveguide loss; quantum well lasers; threshold current; Capacitive sensors; Degradation; Energy measurement; Gallium; Optical losses; Optical scattering; Optical waveguides; Performance gain; Quantum well lasers; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553765
