• DocumentCode
    3384242
  • Title

    Fabrication of GaAsN homo-junction solar cells by chemical beam epitaxy

  • Author

    Suzuki, H. ; Nishimura, K. ; Hashiguchi, T. ; Saito, K. ; Balasubramanian, B. ; Yamamoto, S. ; Inagaki, M. ; Ohshita, Y. ; Kojima, N. ; Yamaguchi, M.

  • Author_Institution
    Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The reduction of residual acceptors in GaAsN films and the improvement of GaAsN crystal quality evidenced by hole mobility and PL intensity were reported. Si doping using a SiH4 gas was also studied. Based on these results GaAsN homo-junction solar cells were fabricated by CBE at the first time. The short circuit current, open circuit voltage, fill factor and conversion efficiency of the GaAsN solar cell are 8.99 mA/cm2, 0.48 V, 0.43, and 1.93 %, respectively.
  • Keywords
    Chemicals; Epitaxial growth; Fabrication; Molecular beam epitaxial growth; Photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922852
  • Filename
    4922852
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3384242