Novel 1.55 /spl mu/m VCSELs with top metamorphic GaAs/GaAlAs and bottom InP/InGaAsP Bragg reflectors

Author

Starck, C. ; Boucart, J. ; Plais, A. ; Bouche, N. ; Derouin, E. ; Pinquier, A. ; Gaborit, F. ; Bonnet-Gamard, J. ; Fortin, C. ; Goldstein, L. ; Brillouet, F. ; Salet, P. ; Carpentier, D. ; Jacquet, J.

Author_Institution

Groupement d´Interet Econ., OPTO+, Marcoussis, France

Volume

4

fYear

1999

fDate

21-26 Feb. 1999

Firstpage

90

Abstract

A novel 1.55-/spl mu/m surface-emitting laser structure based on a tunnel junction for current injection and GaAs-AlAs top mirror directly grown on InP cavity in a 2 in. compatible process allows cw operation at room temperature.

Keywords

distributed Bragg reflector lasers; infrared sources; laser transitions; optical transmitters; quantum well lasers; surface emitting lasers; 1.55 /spl mu/m VCSELs; 1.55 mum; 1.55-/spl mu/m surface-emitting laser structure; 2 in; GaAs-AlAs; GaAs-AlAs top mirror; InP; InP cavity; MQW lasers; bottom InP/InGaAsP Bragg reflectors; current injection; cw operation; room temperature; top metamorphic GaAs/GaAlAs; tunnel junction; Costs; Gallium arsenide; Indium phosphide; Mirrors; Optical design; Reflectivity; Stimulated emission; Substrates; Thermal conductivity; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication. OFC/IOOC '99. Technical Digest

Conference_Location

San Diego, CA, USA

Print_ISBN

1-55752-582-X

Type

conf

DOI

10.1109/OFC.1999.766004

Filename

766004