Title :
Modal gain reduction due to barrier state carriers in quantum well lasers
Author :
Finzi, D. ; Mikhaelashvili, V. ; Tessler, N. ; Eisenstein, G.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
We describe changes in modal gain resulting from effects related to barrier state electrons in InGaAs-GaAs quantum well lasers operating near 980 nm. Electrical and optical excitations can lead to extreme changes in the modal gain-loss balance due to changes in absorption and optical confinement.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser modes; laser transitions; light absorption; quantum well lasers; 980 nm; InGaAs-GaAs; InGaAs-GaAs quantum well lasers; absorption; barrier state carriers; barrier state electrons; electrical excitations; modal gain reduction; modal gain-loss balance; optical confinement; optical excitations; quantum well lasers; Carrier confinement; Charge carrier density; Electron optics; Laser excitation; Laser transitions; Optical bistability; Optical losses; Optical refraction; Optical variables control; Quantum well lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553766
