Optimization of growth conditions for the OMVPE grown InAsP/InP quantum well

Author

Kim, Jeong Soo ; Kim, Hyung Mun ; Suh, Kyung-Soo ; Kim, Hye Rim ; Lee, Seung Won ; Choo, Heung Ro ; Kim, Hong Man ; Pyun, Kwang Eui

Author_Institution

Semicond. Dept., Electron. & Telecommun. Res. Inst., Taejon, South Korea

fYear

1996

fDate

21-25 Apr 1996

Firstpage

482

Lastpage

485

Abstract

We have investigated the optical quality of a InAsP/InP single quantum well with a 40 Å well thickness grown by organo metallic vapor phase epitaxy at various growth conditions such as growth temperature, V/III ratio, and growth rate, using room temperature photoluminescence (PL) and high resolution X-ray diffraction. The full width at half maximum of PL peaks always increases with the increase of As composition regardless of the growth conditions. However, we observe several different behaviors of PL peak broadening depending on the growth conditions. This different behavior is well described as a function of AsH₃ flow rate. Based upon our results, we suggest that relatively low growth temperature and low V/III ratio are suitable for the growth of high quality InAsP/InP quantum well structure

Keywords

III-V semiconductors; X-ray diffraction; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; spectral line broadening; vapour phase epitaxial growth; 40 A; As composition; AsH₃ flow rate; InAsP-InP; OMVPE grown InAsP/InP quantum well; PL peak; PL peak broadening; V/III ratio; full width at half maximum; growth conditions; growth rate; growth temperature; high quality InAsP/InP quantum well structure; high resolution X-ray diffraction; low V/III ratio; low growth temperature; optical quality; optimization; organo metallic vapor phase epitaxy; room temperature photoluminescence; single quantum well; well thickness; Epitaxial growth; Indium phosphide; Lattices; Optical diffraction; Optoelectronic devices; Photoluminescence; Quantum well devices; Substrates; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492287

Filename

492287