Title :
A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As/sub 2/ and As/sub 4/
Author :
Dion, M. ; Gupta, V.K. ; Wasilewski, Z.R. ; Norman, C.E. ; Pratt, A.R. ; Chow-Chong, P. ; Williams, R.L.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
The migration of indium on patterned substrates during MBE growth is found to be strongly dependent upon the arsenic species used. InGaAs-GaAs SQW lasers grown on narrow mesas using AS/sub 4/ exhibited 70-meV redshifts, while those grown using As/sub 2/ showed only small redshifts.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; red shift; semiconductor growth; substrates; 70 meV; As/sub 2/; As/sub 4/; InGaAs-GaAs; InGaAs-GaAs SQW lasers; InGaAs-GaAs-AlGaAs; MBE growth; SQW InGaAs-GaAs-AlGaAs lasers; arsenic species; indium migration; narrow mesas; patterned substrates; redshifts; small redshifts; Educational institutions; Etching; Gallium arsenide; Indium gallium arsenide; Laser theory; Materials science and technology; Molecular beam epitaxial growth; Photonic band gap; Semiconductor materials; Substrates;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553768
