A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As/sub 2/ and As/sub 4/

Author

Dion, M. ; Gupta, V.K. ; Wasilewski, Z.R. ; Norman, C.E. ; Pratt, A.R. ; Chow-Chong, P. ; Williams, R.L.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

103

Lastpage

104

Abstract

The migration of indium on patterned substrates during MBE growth is found to be strongly dependent upon the arsenic species used. InGaAs-GaAs SQW lasers grown on narrow mesas using AS/sub 4/ exhibited 70-meV redshifts, while those grown using As/sub 2/ showed only small redshifts.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; red shift; semiconductor growth; substrates; 70 meV; As/sub 2/; As/sub 4/; InGaAs-GaAs; InGaAs-GaAs SQW lasers; InGaAs-GaAs-AlGaAs; MBE growth; SQW InGaAs-GaAs-AlGaAs lasers; arsenic species; indium migration; narrow mesas; patterned substrates; redshifts; small redshifts; Educational institutions; Etching; Gallium arsenide; Indium gallium arsenide; Laser theory; Materials science and technology; Molecular beam epitaxial growth; Photonic band gap; Semiconductor materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553768

Filename

553768