Title :
Analysis and test of electromigration failures in FPGAs
Author :
Vasudevan, Barath ; Niamat, Mohammed ; Alam, Mansoor ; Vemuru, Srinivasa
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA
fDate :
May 30 2010-June 2 2010
Abstract :
With the scaling of submicron device dimensions, the current density and the temperature of interconnects have increased many folds leading to component failure due to electromigration. This paper analyzes the effect of electromigration failures in the interconnect of SRAM-based Field Programmable Gate Arrays (FPGAs). The Mean Time to Failure (MTF) of interconnects is calculated for different benchmark circuits and the variation of current density with MTF is observed. A frequency domain Built-in-Self Test (BIST) scheme is proposed which employs Arithmetic Fourier Transform (AFT) to obtain the spectrum of control sequences to detect weak logic signals.
Keywords :
Fourier transforms; SRAM chips; built-in self test; electromigration; field programmable gate arrays; interconnections; BIST; FPGA; SRAM; arithmetic Fourier transform; component failure; current density; electromigration failures; field programmable gate arrays; frequency domain built-in-self test; interconnects; mean time to failure; submicron device; temperature; Benchmark testing; Circuit testing; Current density; Electromigration; Failure analysis; Field programmable gate arrays; Frequency domain analysis; Integrated circuit interconnections; Logic testing; Temperature;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537680
