Aluminum Nitride reconfigurable RF-MEMS front-ends

Author

Tazzoli, Augusto ; Rinaldi, Matteo ; Zuo, Chengjie ; Sinha, Nipun ; Van der Spiegel, Jan ; Piazza, Gianluca

Author_Institution

Dept. of Electr. & Syst. Eng., Univ. of Pennsylvania, Philadelphia, PA, USA

fYear

2011

fDate

25-28 Oct. 2011

Firstpage

1046

Lastpage

1049

Abstract

Aluminum Nitride based piezoelectric microelectromechanical systems (MEMS) technology has the potential to develop a fully integrated radio frequency (RF) platform that satisfies the requirements of next-generation communication standards: reconfigurability, miniaturization, and low power consumption. Here we report on the recent developments of this AlN thin-film based technology, namely resonators, filters, oscillators and switches. These examples highlight how MEMS will enable the mass manufacturing of reconfigurable RF front-ends.

Keywords

aluminium compounds; band-pass filters; low-power electronics; micromechanical resonators; piezoelectric thin films; radiofrequency oscillators; AlN; AlN thin film; aluminum nitride; filters; low power consumption; miniaturization; next-generation communication standards; oscillators; piezoelectric microelectromechanical systems; reconfigurable RF-MEMS front-ends; resonators; switches; Charge coupled devices; Radio frequency; Resonant frequency; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2011 IEEE 9th International Conference on

Conference_Location

Xiamen

ISSN

2162-7541

Print_ISBN

978-1-61284-192-2

Electronic_ISBN

2162-7541

Type

conf

DOI

10.1109/ASICON.2011.6157387

Filename

6157387