Fabrication of integrated CIGS modules using the in-line three-stage process

We have attempted an in-line three-stage process for the deposition of CIGS (CuInGaSe2) absorber layers. The allowed growth area of CIGS deposition apparatus is 30 × 30 cm², and the compositional uniformity and distribution of cell performance have been investigated. Large-size grains and band-grading typical for the three-stage process have been observed. The composition ratios and the performance of small area cells (0.5 cm²) have shown good uniformity over the whole deposition area, with an average efficiency of 15.8 % without anti-reflection coating. By improving CIGS deposition process, efficiency of small cells enhanced up to 17.3 %. Minimodules with aperture area of 76.5 cm² were also fabricated on 10 × 10 cm² SLG substrates. Preliminary results showed efficiency as high as η = 14.2 % with anti-reflection coating.