DocumentCode
3385016
Title
CuIn1-x GaxS2 thin film solar cells with Znx Cd1-x S as heterojunction partner
Author
Kumar, Bhaskar ; Vasekar, Parag ; Dhere, Neelkanth G. ; Koishiyev, Galymzhan T.
Author_Institution
Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, 32922-5703, USA
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
3
Abstract
Copper indium gallium sulfide, CuIn1-x Gax S2 (CIGS2) solar cells prepared with chemical bath deposited heterojunction partner zinc-cadmium sulfide (Znx Cd1-x S) layer has exhibited better blue photon response and in turn, higher currents. This can be attributed to its higher bandgap than that of CdS. The open circuit voltages for CIGS2/Znx Cd1-x S were also higher than those of the CIGS2/CdS devices, indicating improved junction properties. A cross-over effect was indicated by J-V curves at different temperatures showing the need for further optimization.
Keywords
Chemicals; Circuits; Copper; Gallium compounds; Heterojunctions; Indium; Photonic band gap; Photovoltaic cells; Voltage; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922889
Filename
4922889
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