Title :
Analysis of the critical rise time in MOBILE-based circuits
Author :
Quintana, José M. ; Avedillo, María J.
Author_Institution :
Inst. de Microelectron. de Sevilla, Univ. de Sevilla, Sevilla
fDate :
Aug. 31 2008-Sept. 3 2008
Abstract :
It is well known that there is a critical value for the rising time of the clocked bias signal which limits the operating speed of MOBILE-based circuits. This paper analyzes the transient response of a MOBILE-based follower and obtains analytical expressions to calculate the critical value for the rising time of the bias signal below which the circuit does not operate correctly. This analysis has been extended to more complex circuits such as threshold gates, we have also derived operating speed limits for these circuits. Results obtained have been validated through extensive simulations with HSPICE.
Keywords :
SPICE; logic devices; resonant tunnelling diodes; transient response; HSPICE; MOBILE- based circuits; clocked bias signal; critical rise time; monostable-bistable transition logic element; resonant tunnelling diodes; transient response; Circuit simulation; Circuit topology; Clocks; Cost function; Diodes; Logic; Resonant tunneling devices; Signal analysis; Transient analysis; Transient response; Monostable-bistable Transition Logic Element (MOBILE); Nanoelectronics; Operating Speed; Resonant Tunnelling Diodes (RTDs);
Conference_Titel :
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location :
St. Julien´s
Print_ISBN :
978-1-4244-2181-7
Electronic_ISBN :
978-1-4244-2182-4
DOI :
10.1109/ICECS.2008.4675009
