Title :
A 0.8–2.5GHz wideband SiGe BiCMOS low noise amplifier with noise fiugre of 1.98–3.3dB
Author :
Hua, Lin ; Yan, Qiong ; Chen, Lei ; Zhang, Runxi ; Shi, Chunqi ; Lai, Zongsheng
Author_Institution :
Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China
Abstract :
This paper presents an optimized 0.8-2.5GHz low noise amplifier for wideband applications. Based on cascade structure, a shunt resistive feedback with an emitter degeneration inductor is used. Both low noise figure and high gain are achieved simultaneously. Measured results show that the proposed LNA has a maximum gain of 19.6dB at 0.8GHz and a minimum gain of 14.3dB at 2.5GHz. The noise figure varies from 1.98 to 3.3dB among the whole band. The overall power supply is 24mw at 3V supply and the occupied die area is only 0.4mm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; feedback amplifiers; inductors; low noise amplifiers; wideband amplifiers; SiGe; cascade structure; emitter degeneration inductor; frequency 0.8 GHz to 2.5 GHz; noise figure 1.98 dB to 3.3 dB; shunt resistive feedback; voltage 3 V; wideband SiGe BiCMOS low noise amplifier; Noise measurement; Optimization; Power measurement; Radio frequency; Wideband;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157397
