DocumentCode
3385054
Title
Impacts of the MTCMOS technology on power supply network: a full-chip perspective
Author
Shi, Jin ; Cai, Yici
Author_Institution
Dept.of Comput. Sci. & Technol., Tsinghua Univ., Beijing, China
fYear
2009
fDate
23-25 July 2009
Firstpage
996
Lastpage
999
Abstract
Multi-threshold CMOS(MTCMOS) has been developed as one of the most efficient techniques to reduce leakage power. However, sleep transistor insertion might impose problems on power supply network design. We studied IR-drop variance by sleep transistor insertion at the full-chip level. Our work covered different modes, structures and tapping patterns. We identified in most cases the varied current distribution can be balanced locally well. Besides, ldquorush currentrdquo can have large and wide impacts.
Keywords
CMOS integrated circuits; current distribution; power supply circuits; IR-drop variance; full-chip perspective; leakage power reduction; multithreshold CMOS technology; power supply network design; sleep transistor insertion; Analytical models; CMOS technology; Computer science; Current distribution; Electronic design automation and methodology; Emergency power supplies; Energy consumption; Leakage current; Power supplies; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location
Milpitas, CA
Print_ISBN
978-1-4244-4886-9
Electronic_ISBN
978-1-4244-4888-3
Type
conf
DOI
10.1109/ICCCAS.2009.5250338
Filename
5250338
Link To Document