• DocumentCode
    3385064
  • Title

    Energy levels in a finite parabolic quantum dot under applied electric fields

  • Author

    Niculescu, Ecaterina C. ; Cristea, M.

  • Author_Institution
    Dept. of Phys., Politehnica Univ. of Bucharest, Romania
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    335
  • Abstract
    We have calculated the energies of the ground and the first excited states of an electron in a spherical GaAs-Ga1-xAlxAs quantum dot with parabolic confinement in the case of both finite and infinite barrier height. We have studied the electric field dependence of the ground state energy of an electron spatially confined in this structure. We have found that the finite height of the confining barrier considerably contributes to the change of the ground state energies, especially for the small dot radii and in the presence of a strong applied electric field
  • Keywords
    III-V semiconductors; aluminium compounds; excited states; gallium arsenide; ground states; interface states; semiconductor quantum dots; GaAs-GaAlAs; applied electric fields; barrier height; confining barrier; electric field dependence; energy levels; finite parabolic quantum dot; first excited state; ground state; ground state energy; parabolic confinement; small dot radii; spherical GaAs-Ga1-xAlxAs quantum dot; Electrons; Energy states; Physics; Polarization; Quantum dots; Semiconductor materials; Stationary state; US Department of Transportation; Wave functions; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810531
  • Filename
    810531