DocumentCode :
3385064
Title :
Energy levels in a finite parabolic quantum dot under applied electric fields
Author :
Niculescu, Ecaterina C. ; Cristea, M.
Author_Institution :
Dept. of Phys., Politehnica Univ. of Bucharest, Romania
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
335
Abstract :
We have calculated the energies of the ground and the first excited states of an electron in a spherical GaAs-Ga1-xAlxAs quantum dot with parabolic confinement in the case of both finite and infinite barrier height. We have studied the electric field dependence of the ground state energy of an electron spatially confined in this structure. We have found that the finite height of the confining barrier considerably contributes to the change of the ground state energies, especially for the small dot radii and in the presence of a strong applied electric field
Keywords :
III-V semiconductors; aluminium compounds; excited states; gallium arsenide; ground states; interface states; semiconductor quantum dots; GaAs-GaAlAs; applied electric fields; barrier height; confining barrier; electric field dependence; energy levels; finite parabolic quantum dot; first excited state; ground state; ground state energy; parabolic confinement; small dot radii; spherical GaAs-Ga1-xAlxAs quantum dot; Electrons; Energy states; Physics; Polarization; Quantum dots; Semiconductor materials; Stationary state; US Department of Transportation; Wave functions; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
Type :
conf
DOI :
10.1109/SMICND.1999.810531
Filename :
810531
Link To Document :
بازگشت