Preparation of high quality CuIn1-xGaxSe2 thin films by modified selenization procedure of sequential sputtering metallic precursors

Chalchopyrite CIGS thin films were prepared by the two-stage growth technique. The processes were based on the controlled selenization of sputtering metallic precursors with elemental Se vapor in closed space. The modified selenization process by fitting data prevented the substantial losses and the formation of voids from the interior of absorbers. Accordingly, adhesion was improved and the grain was enlarged, which could span throughout the entire film from the surface towards the Mo back electrode. In addition, a single-phased CIGS thin film was obtained by this selenization process simultaneously.