DocumentCode
3385112
Title
Photoelectric properties of ZnTe-CdSe and CdSe-ZnTe thin film heterojunctions
Author
Ghimpu, Lidia
Author_Institution
Dept. of Phys., State Univ. of Moldova, Chisinau, Moldova
Volume
1
fYear
1999
fDate
1999
Firstpage
347
Abstract
For the first time heterojunctions (HJs) of ZnTe-CdSe were grown by deposition of ZnTe layer on glass substrate by the discrete evaporation method and CdSe layer by the quasiclosed volume method. Also for the first time the CdSe-ZnTe HJ was grown by quasiclosed volume method. Results of investigation of the photoelectric properties of these heterojunctions are presented
Keywords
II-VI semiconductors; cadmium compounds; photoelectricity; semiconductor heterojunctions; semiconductor thin films; vacuum deposition; zinc compounds; CdSe-ZnTe; ZnTe-CdSe; discrete evaporation method; photoelectric properties; quasiclosed volume method; thin film heterojunctions; Absorption; Heterojunctions; Mechanical factors; Photoconductivity; Physics; Short circuit currents; Thin film circuits; Transistors; Voltage; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location
Sinaia
Print_ISBN
0-7803-5139-8
Type
conf
DOI
10.1109/SMICND.1999.810534
Filename
810534
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