Title :
Photoelectric properties of ZnTe-CdSe and CdSe-ZnTe thin film heterojunctions
Author_Institution :
Dept. of Phys., State Univ. of Moldova, Chisinau, Moldova
Abstract :
For the first time heterojunctions (HJs) of ZnTe-CdSe were grown by deposition of ZnTe layer on glass substrate by the discrete evaporation method and CdSe layer by the quasiclosed volume method. Also for the first time the CdSe-ZnTe HJ was grown by quasiclosed volume method. Results of investigation of the photoelectric properties of these heterojunctions are presented
Keywords :
II-VI semiconductors; cadmium compounds; photoelectricity; semiconductor heterojunctions; semiconductor thin films; vacuum deposition; zinc compounds; CdSe-ZnTe; ZnTe-CdSe; discrete evaporation method; photoelectric properties; quasiclosed volume method; thin film heterojunctions; Absorption; Heterojunctions; Mechanical factors; Photoconductivity; Physics; Short circuit currents; Thin film circuits; Transistors; Voltage; Zinc compounds;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810534
