• DocumentCode
    3385214
  • Title

    Permutation optimization for SIMD devices

  • Author

    Huang, Libo ; Shen, Li ; Wang, Zhiying

  • Author_Institution
    Sch. of Comput., Nat. Univ. of Defense Technol., Changsha, China
  • fYear
    2010
  • fDate
    May 30 2010-June 2 2010
  • Firstpage
    3849
  • Lastpage
    3852
  • Abstract
    Single-instruction-multiple-data (SIMD) devices have been widely incorporated into baseline instruction level parallelism (ILP) processors to enable more efficient data level parallelism (DLP) support. This paper addresses the unsolved problem of the need to permute the SIMD elements packed in registers for maximum parallelism performance. An implicit data permutation (IDP) mechanism is proposed for handling various permutation operations without performance overhead. Various ways can be used to implement IDP mechanism. One way is to modify the baseline processors with permutation vector register file (PVRF) and associated new extended instructions. The PVRF allows accessing the data by using permutation pattern in addition to the existing row pattern. This method is described in detail and experimental results show that distinct performance speedup can be achieved, which is 47% higher than current SIMD techniques on average.
  • Keywords
    instruction sets; microprocessor chips; parallel processing; IDP mechanism; ILP processor; SIMD device; data level parallelism; implicit data permutation; instruction level parallelism; maximum parallelism performance; permutation operation; permutation optimization; permutation pattern; permutation vector register file; single-instruction-multiple-data device; Computer aided instruction; Computer architecture; Concurrent computing; Design optimization; Hardware; Parallel processing; Performance gain; Pipelines; Process design; Registers; SIMD; optimization; performance; permutation; vector register file;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-5308-5
  • Electronic_ISBN
    978-1-4244-5309-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.2010.5537700
  • Filename
    5537700