Title :
Dark current reduction for 2.5 μm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature
Author :
D´Hondt, M. ; Moerman, I. ; Demeester, P.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
Abstract :
We describe the influence of growth temperature, buffer layer structure and substrate orientation on the dark current density of test devices. All growth runs were performed by means of low-pressure MOVPE, using a horizontal liner. The processing of these devices consisted of deposition of TiAu contacts, by using a removable Ni mask, with openings of different size and shape. These metal contacts were in turn used as a mask for the etching of the mesa
Keywords :
III-V semiconductors; dark conductivity; etching; gallium arsenide; gold alloys; indium compounds; infrared detectors; interface states; masks; photodetectors; semiconductor growth; titanium alloys; vapour phase epitaxial growth; 2.5 mum; InGaAs; InGaAs photodetectors; Ni; TiAu; TiAu contacts; buffer layer structure; bufferlayer structure; dark current density; dark current reduction; etching; growth temperature; horizontal liner; low-pressure MOVPE; mesa; metal contacts; removable Ni mask; substrate orientation; test devices; Dark current; Detectors; Electromagnetic wave absorption; Indium gallium arsenide; Lattices; Morphology; Photodetectors; Temperature; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492290
