Dark current reduction for 2.5 μm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature

Author

D´Hondt, M. ; Moerman, I. ; Demeester, P.

Author_Institution

Dept. of Inf. Technol., Ghent Univ., Belgium

fYear

1996

fDate

21-25 Apr 1996

Firstpage

494

Lastpage

495

Abstract

We describe the influence of growth temperature, buffer layer structure and substrate orientation on the dark current density of test devices. All growth runs were performed by means of low-pressure MOVPE, using a horizontal liner. The processing of these devices consisted of deposition of TiAu contacts, by using a removable Ni mask, with openings of different size and shape. These metal contacts were in turn used as a mask for the etching of the mesa

Keywords

III-V semiconductors; dark conductivity; etching; gallium arsenide; gold alloys; indium compounds; infrared detectors; interface states; masks; photodetectors; semiconductor growth; titanium alloys; vapour phase epitaxial growth; 2.5 mum; InGaAs; InGaAs photodetectors; Ni; TiAu; TiAu contacts; buffer layer structure; bufferlayer structure; dark current density; dark current reduction; etching; growth temperature; horizontal liner; low-pressure MOVPE; mesa; metal contacts; removable Ni mask; substrate orientation; test devices; Dark current; Detectors; Electromagnetic wave absorption; Indium gallium arsenide; Lattices; Morphology; Photodetectors; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492290

Filename

492290