DocumentCode :
3385427
Title :
Energy model of CMOS gates using a piecewise linear model
Author :
Liu, Cheng C. ; Chang, Jian ; Johnson, Louis G.
Author_Institution :
Univ. of Wisconsin - Stout, Menomonie, WI, USA
fYear :
2010
fDate :
May 30 2010-June 2 2010
Firstpage :
3829
Lastpage :
3832
Abstract :
We extend our previous work on delay estimation with a piecewise linear model and propose efficient formulae for power estimation including short-circuit power, dynamic power, and leakage power. Our piecewise linear model is a modified switched-resistor model considering transistor saturation current with a linearized BSIM3 capacitance model, which allows to compute energy and output slopes for static CMOS logic gates. Accuracy of the energy formulae are within 10% of SPICE in the worst case for complex static CMOS gates using CMOS 0.5um and 180nm technologies. The proposed energy formulas are computationally efficient, scalable, and suitable for fast power conscious CAD tools for large CMOS circuit simulations.
Keywords :
CMOS logic circuits; SPICE; logic CAD; logic gates; nanoelectronics; piecewise linear techniques; CAD tool; CMOS circuit simulation; SPICE; delay estimation; dynamic power; energy model; leakage power; linearized BSIM3 capacitance model; piecewise linear model; power estimation; short-circuit power; size 0.5 mum; size 180 nm; static CMOS logic gates; switched-resistor model; transistor saturation current; Capacitance; Circuit simulation; Computational modeling; Delay estimation; MOSFETs; Piecewise linear techniques; SPICE; Semiconductor device modeling; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
Type :
conf
DOI :
10.1109/ISCAS.2010.5537712
Filename :
5537712
Link To Document :
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