Title :
79GHz Push-Push oscillators in 0.13μm SiGe BiCMOS technology
Author :
Ameziane, C. ; Taris, T. ; Plana, R. ; Badets, F. ; Deval, Y. ; Begueret, JB
Author_Institution :
IMS Lab., Univ. of Bordeaux, Bordeaux
fDate :
Aug. 31 2008-Sept. 3 2008
Abstract :
This paper describes VCO designs based on varactor tuned Push-Push architecture. Two versions (powered under 1.2V and 1.8V) of the 79GHz oscillators have been designed in a 0.13mum SiGe BiCMOS technology, thus targeting automotive Radar and millimeter-wave applications. Their tuning ranges are respectively set on 6GHz (7.6%) and 7GHz (8.8%). The oscillator cores solely consume 18mW and 30mW, and both achieve low phase noise characteristics -102dBc/Hz at 1MHz offset from the carrier frequency (80GHz) and output powers of -18dBm and 0dBm respectively.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; varactors; voltage-controlled oscillators; BiCMOS technology; VCO; automotive Radar; frequency 79 GHz; low phase noise; millimeter-wave applications; size 0.13 mum; varactor tuned push-push oscillators; Automotive engineering; BiCMOS integrated circuits; Germanium silicon alloys; Millimeter wave radar; Millimeter wave technology; Radar applications; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location :
St. Julien´s
Print_ISBN :
978-1-4244-2181-7
Electronic_ISBN :
978-1-4244-2182-4
DOI :
10.1109/ICECS.2008.4675042
