79GHz Push-Push oscillators in 0.13μm SiGe BiCMOS technology

Author

Ameziane, C. ; Taris, T. ; Plana, R. ; Badets, F. ; Deval, Y. ; Begueret, JB

Author_Institution

IMS Lab., Univ. of Bordeaux, Bordeaux

fYear

2008

fDate

Aug. 31 2008-Sept. 3 2008

Firstpage

1071

Lastpage

1074

Abstract

This paper describes VCO designs based on varactor tuned Push-Push architecture. Two versions (powered under 1.2V and 1.8V) of the 79GHz oscillators have been designed in a 0.13mum SiGe BiCMOS technology, thus targeting automotive Radar and millimeter-wave applications. Their tuning ranges are respectively set on 6GHz (7.6%) and 7GHz (8.8%). The oscillator cores solely consume 18mW and 30mW, and both achieve low phase noise characteristics -102dBc/Hz at 1MHz offset from the carrier frequency (80GHz) and output powers of -18dBm and 0dBm respectively.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; varactors; voltage-controlled oscillators; BiCMOS technology; VCO; automotive Radar; frequency 79 GHz; low phase noise; millimeter-wave applications; size 0.13 mum; varactor tuned push-push oscillators; Automotive engineering; BiCMOS integrated circuits; Germanium silicon alloys; Millimeter wave radar; Millimeter wave technology; Radar applications; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on

Conference_Location

St. Julien´s

Print_ISBN

978-1-4244-2181-7

Electronic_ISBN

978-1-4244-2182-4

Type

conf

DOI

10.1109/ICECS.2008.4675042

Filename

4675042