Title :
Composition variation of InGaAsP grown on (111)B faceted V-groove InP substrates by gas source molecular beam epitaxy
Author :
Wang, J. ; Thompson, D.A. ; Robinson, B.J. ; Simmons, J.G.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Abstract :
The authors have grown 40 nm thick InGaAsP layers by gas source molecular beam epitaxy on V-groove etched (100) InP substrates. Transmission electron microscopy (TEM) has been used to examine defect information and layer thickness; energy dispersive X-ray analysis (EDX) has been used to measure the composition variation along the sidewalls and at the bottoms of the V-grooves. Based on the measured spatial distribution of composition, the strain and energy bandgap distributions are calculated. These are compared to low-temperature photoluminescence energy-bandgap measurements
Keywords :
III-V semiconductors; X-ray chemical analysis; chemical beam epitaxial growth; crystal defects; energy gap; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; surface structure; transmission electron microscopy; (111)B faceted V-groove InP substrates; 40 nm; EDX; GSMBE; InGaAsP; InP; TEM; V-groove etched (100) InP substrates; V-grooves; composition variation; defect information; energy bandgap distributions; energy dispersive X-ray analysis; gas source molecular beam epitaxy; layer thickness; low-temperature photoluminescence energy-bandgap measurements; sidewalls; spatial distribution; strain; transmission electron microscopy; Dispersion; Energy measurement; Etching; Indium phosphide; Information analysis; Molecular beam epitaxial growth; Strain measurement; Substrates; Thickness measurement; Transmission electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492295
