Title :
A 3D RRAM using stackable 1TXR memory cell for high density application
Author :
Zhang, Ji ; Ding, Yiqing ; Xue, Xiaoyong ; Gang Jin ; Wu, Yuxin ; Xie, Yufeng ; Lin, Yinyin
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
This paper reports a novel 3D RRAM concept using stackable multi-layer 1TXR memory cell structure for future high density application. Using an 8-layer metal of stacked 1TXR (X = 64) as an example, the density is over 260% higher than that of the conventional single layer 1T1R structure. Corresponding operation algorithm is put forward for the first time, which can inhibit mis-write and mis-read caused by sneaking current and reduce power consumption.
Keywords :
random-access storage; 3D RRAM concept; resistive random access memory; stackable 1TXR memory cell structure; Diodes; Electrodes; Energy consumption; Equivalent circuits; Microelectronics; Random access memory; Resistors; Scalability; Silicon; Stacking;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250369