DocumentCode
3385732
Title
The influence of copper contamination on gate oxide integrity
Author
Vermeire, B. ; Parks, H.G.
Author_Institution
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fYear
1997
fDate
10-12 Sep 1997
Firstpage
30
Lastpage
32
Abstract
It is shown that low levels of copper contamination present on pre-oxidation silicon surfaces significantly affect not only the area, but also the field overlap defect density of the gate oxide. The gate oxide yield loss associated with the field overlap defects will dominate in circuits with device dimensions below 10 μm
Keywords
copper; elemental semiconductors; oxidation; silicon; surface contamination; 10 micron; Cu; Si; area; copper contamination; field overlap defect density; gate oxide integrity; silicon surface; yield; Atomic measurements; Breakdown voltage; Capacitors; Copper; MOS devices; Oxidation; Poisson equations; Pollution measurement; Silicon; Surface contamination;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
0-7803-4050-7
Type
conf
DOI
10.1109/ASMC.1997.630700
Filename
630700
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