DocumentCode
3385793
Title
Trains of 250 fs pulses at sub-intrinsic-cavity roundtrip intervals from chirped mode-locked laser diodes
Author
Stelmakh, N. ; Azouz, A. ; Lourtioz, J.-M.
Author_Institution
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
113
Lastpage
114
Abstract
To our knowledge, fine periodical evolutions of the pulse structure with the length of the external cavity have never been reported in short-pulse mode-locked extended-cavity laser diodes. In this communication, we demonstrate a strong inter-dependence between the external and intrinsic cavity lengths in these mode-locked laser systems when an external chirp compensation is used. We found that the length of the external cavity (l/sub e/) must be equal to a multiple of the intrinsic laser diode cavity length (l/sub i/) to produce standard pulse structures with one sub-pulse per intrinsic cavity roundtrip time. Similarly, the external cavity length must be equal to (m+1/n)*l/sub i/, with m being an integer, to obtain n sub-pulses per intrinsic cavity roundtrip time. In our experiments, we observed pronounced pulse structures for n up to 8. This latter value corresponds to the generation of /spl sim/250 fs pulse trains with a pulse repetition rate of /spl sim/300 GHz and a total energy /spl sim/20-30 pJ.
Keywords
III-V semiconductors; aluminium compounds; chirp modulation; gallium arsenide; laser cavity resonators; laser mode locking; semiconductor lasers; 20 to 30 pJ; 250 fs; 250 fs pulse trains; 300 GHz; AlGaAs; active mode-locked AlGaAs laser diode system; chirped mode-locked laser diodes; external cavity length; external chirp compensation; fine periodical evolutions; intrinsic cavity length; pulse repetition rate; pulse structures; short-pulse mode-locked extended-cavity laser diodes; sub-intrinsic-cavity roundtrip intervals; total energy; Autocorrelation; Chirp; Diode lasers; Electrons; Laser mode locking; Mirrors; Optical pulse generation; Optical pulses; Power generation; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.553773
Filename
553773
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